PART |
Description |
Maker |
IDT70T3719MS133BBG IDT70T3719MS133BBGI IDT70T3719M |
HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 72 DUAL-PORT SRAM, 15 ns, PBGA324
|
Integrated Device Technology, Inc.
|
IDT70T651 IDT70T651S10BC IDT70T651S10BCI IDT70T651 |
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
|
IDT[Integrated Device Technology]
|
W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM 128K x 16 HIGH-SPEED CMOS STATIC RAM From old datasheet system 128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM)的 128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond] Winbond Electronics Corp Winbond Electronics, Corp.
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K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
IS63LV1024-8KL IS63LV1024L-10HL IS63LV1024L-10KLI |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
CXK77B3641GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
|
Sony, Corp.
|
EDI8L32128C12AI EDI8L32128C15AI EDI8L32128C20AI ED |
15ns; 5V power supply; 128K x 32 CMOS high speed static RAM 20ns; 5V power supply; 128K x 32 CMOS high speed static RAM 17ns; 5V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 From old datasheet system 128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
AS7C33128PFD36A-166TQI AS7C33128PFD32A AS7C33128PF |
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 150MHz 3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 133MHz 3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz 3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 166MHz 3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 150MHz 3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 133MHz 3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
|
Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor Corp...
|
IDT709099L9PFI |
HIGH-SPEED 128K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 128K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Technology, Inc.
|